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- Junction Depth - an overview | ScienceDirect Topics
In modern MOSFETs, the source drain (S D) structures have two regions—a shallow junction region extending under the gate known as source drain extension (SDE) and a deeper junction region known as the source drain contact Junction depth always refers to the SDE junction depth
- Shallow Junctions
While channel lengths have been scaled aggressively over the last several years, the junction depth has not been scaled quite as aggressively, and in particular, ultra-shallow junctions have been hard to achieve in manufacturing for various reasons
- Bulk FinFETs: Design at 14 nm Node and Key Characteristics
The S D junction depth should be equal or slightly smaller than the height of fin body, defined from the surface of the isolation oxide region to the top of the fin body
- Modeling Stress, Defect Evolution, and Junction Leakage
Qualitatively, the impact of stress on non-silicon semiconductors is similar to silicon One important difference is that silicon is the most rigid of semiconductors of interest That means that the same applied force leads to the larger strain in non-silicon semiconductors compared to silicon
- Shallow Junctions, Silicide Requirements and Process . . . - IEEE Xplore
Abstract: CMOS technology scaling dictates the reduction of the Source Drain (S D) junction depths to reduce punch-through and short channel effects
- Oxide thickness and S D junction depth based variation aware OTA design . . .
As the gate lengths of FinFETs are scaled into nano meter regime, spatial variations in oxide thickness (Tox) and junction depth (Xj) of source drain (S D) doping profile will largely decide the performance of digital and analog circuits that can fall below or above the desired value
- (PDF) “Overview and status of metal S D Shottky . . . - ResearchGate
In this paper, the metal source drain (S D) Schottky-barrier (SB) MOSFET technology is reviewed
- Impact of shallow source drain on the short-channel characteristics of . . .
We fabricated an ultrashallow S D junction by solid phase diffusion of boron from a BSG sidewall By precisely estimating the effective channel length, we found that the threshold voltage roll-off is independent of junction depth
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