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- 高光溢出_百度百科
高光溢出（Blooming）指 图像传感器 中像素电荷超过容量时，溢出电荷污染相邻像素导致图像局部过曝的现象，常见于 CCD传感器 中。其成因是 光电二极管 在强光下产生的电子超过阱容量，引发光晕效应并伴随细节丢失与紫边问题加剧 [4] [7]。 CMOS传感器 因电荷处理方式不同，可在高 动态范围 场景中
- What is CCD Blooming and Anti Blooming- Oxford Instruments
What is CCD Blooming and Anti Blooming? Why does 'blooming' happen? Blooming occurs when the charge in a pixel exceeds the saturation level and the charge starts to fill adjacent pixels Typically CCD sensors are designed to allow easy vertical shifting of the charge, but potential barriers are created to reduce flow into horizontal pixels Hence the excess charge will preferentially flow into
- 高光溢出（Blooming）_像素blooming-CSDN博客
文章浏览阅读5 1k次。本文介绍了数码相机中出现的一种现象——高光溢出，详细解释了该现象产生的原理及其对图像质量的影响，同时探讨了传感器如何通过高光溢出保护功能来减少这种现象。
- Hamamatsu Learning Center: CCD Saturation and Blooming
Any type of antiblooming structure incorporated into the CCD architecture involves some reduction in sensor performance, and drain devices containing lateral or vertical overflows present specific advantages and disadvantages
- How to Measure Anti-Blooming (2) « Harvest Imaging Blog
This blog will focus on the measurement of the anti-blooming capabilities of a monochrome sensor As known, blooming occurs when a (group of) pixel (s) is overexposed and the photodiode can no longer store all generated charges With an anti-blooming structure inside the pixel, the excessively generated charges can be drained, e g excessive electrons can escape through the reset transistor to
- antiblooming - 英中 – Linguee词典
大量翻译例句关于"antiblooming" – 英中词典以及8百万条中文译文例句搜索。
- Anti-Blooming Clocking for Time-Delay Integration CCDs - MDPI
Kamasz, S R ; Singh, S P ; Ingram, S G ; Kiik, M J ; Tang, Q ; Benwell, B Enhanced Full Well for Vertical Antiblooming, High Sensitivity Time-Delay and Integration (TDI) CCDs with GHz Data Rates
- Blooming and Antiblooming in 1. 1 m-Pixel CIS - 百度学术
Conventional tech- niques developed for CCD imagers, such as charge-pumped antiblooming or vertical overflow drain (VOD), are difficult to be implemented in CIS, especially for BSI technology with very thin substrate
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