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AO3400A Thermal Runaway How to Prevent and Fix Overheating Thermal Pad or Thermal Paste: Apply thermal paste or pads between the MOSFET and the heat sink to improve thermal transfer Proper PCB Design: Ensure your PCB has enough copper area for heat dissipation and consider using thicker copper layers to reduce the temperature
AO3400A_Rev3_RoHS - AOSMD The value in any given application depends on the user's specific board design The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C Ratings are based on low frequency and duty cycles to keep initialTJ=25°C
AO3400 Datasheet and Replacement. Cross Reference Search AO3400A N-Ch 30V Fast Switching MOSFETs Description Product Summary The AO3400A is the high cell density trenched N-VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS (ON),typ 27 m and load switch applications
Application and optimization design of AO3400A in high-efficiency . . . Thermal Protection: Integrating thermal protection circuits that monitor the MOSFET’s temperature can also help optimize the circuit's reliability If the temperature rises above a safe threshold, the protection circuitry can reduce the duty cycle or shut down the system to prevent damage
AO3400A_Rev3_RoHS - Digi-Key These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz Copper, assuming a maximum junction temperature of TJ(MAX)=150°C
AO3400A N-channel MOSFET: Introduction, Working Principle and Datasheet The AO3400A is a N-channel MOSFET that leverages advanced trench technology to deliver exceptionally low RDS (ON) Housed in a compact low-resistance SOT-23 package, it offers excellent switching characteristics, and it is ideal for space-constrained designs where thermal efficiency and fast response are critical
AO3400_Rev8_RoHS - AOSMD The value in any given application depends on the user's specific board design The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C Ratings are based on low frequency and duty cycles to keep initialTJ=25°C