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Design and simulation of a dynamically tunable 1× 2 power splitter . . . The designed MZI-based splitter possesses a bandwidth of 400nm over the wavelength range from 1 35μm to 1 75μm for various power splitting ratios, maintaining the averaged insertion loss and the averaged power imbalance, respectively, below as low as 0 39dB and 0 48
An ultra-broadband, and low loss 3-dB optical power splitter with . . . A 5-stage cascaded power splitter and a power splitter-based Mach-Zehnder interferometer (MZI) was fabricated for precise measuring Experimental results demonstrate an average IL of 0 096 dB at 1550 nm, with an IL less than 0 35 dB over the entire measurement range of 1490 nm–1640 nm
Design of a 2 × 4 Hybrid MMI-MZI Configuration with MMI Phase-Shifters The device consists of two identical MMI slab waveguides as power splitters and couplers that are connected with two identical MMI-based phase shifters, and linear tapers at both ends of the MMIs to minimize the power coupling loss
OPTCON Vol. 2 Iss. 4 - Optica Publishing Group Design and simulation of a dynamically tunable 1× 2 power splitter using MZI configuration in the telecom regime Kamalodin Arik, Mahmood Akbari, and Amin Khavasi
Ultra Broadband Tunable Power Splitter Based on Sb2Se3-Assisted Y . . . Compared with currently used passive power splitters in ODN, tunable powers can make the network more adaptable to dynamic application requirements In this work we propose a novel ultra-broadband tunable power splitter based on Sb2Se3-assisted Y- junction
Bandwidth tunable filter based on silicon microring-MZI structure In this paper, we propose and demonstrate a simple and novel bandwidth tunable bandpass filter based on a silicon microring-MZI structure The drop transmissions of the two identical microring resonators are combined together in the MZI structure
Kamalodin Ariks lab | Sharif University of Technology (SHARIF) We propose an ultra-broadband, ultra-compact and a dynamically tunable 1×2 power splitter on silicon on Insulator (SOI) platform with 220 nm thick silicon light-guiding layer, using two