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Interconnect Processing: Integration, Dielectrics, Metals Single damascene scheme was used at via levels with metal etch to pattern the aluminum line levels To reduce the metal line resistance, copper fabrication processes were developed to replace aluminum wire with copper wire
KR100641502B1 - 반도체 소자 제조시 듀얼 다마신 공정을 이용한 콘텍형성방법 - Google Patents US9824970B1 * 2016-06-27 2017-11-21 Globalfoundries Inc Methods that use at least a dual damascene process and, optionally, a single damascene process to form interconnects with hybrid metallization and the resulting structures
1. 1 Dual-Damascene Fabrication Process - TU Wien The dual-damascene process is characterized by patterning the vias and trenches, in such a way that the metal deposition fills both at the same time [4, 6] Figure 1 1 depicts the process steps for fabricating a typical copper dual-damascene interconnect
Dual Damascene - an overview | ScienceDirect Topics Dual damascene is the new technique used to form interconnect structures based on conductive copper metal lines inlaid into an oxide or low dielectric constant (k) nonconductive layer The dual damascene technique forms trenches and vias (hence dual or twice used) into which copper is eventually electroplated
The Copper Damascene Process and Chemical Mechanical Polishing The Cu-damascene (single or its twin dual damascene) is an elegant technique of inlaying copper for wiring throughout the back-end-of-line In a dual damascene structure, only a single metal deposition step is used to simultaneously form the main metal and the metal in the via holes
BEOL 공정 - Dual Damascene Single Damascene 다만, Cu의 경우 Dry Etch가 안되기 때문에 Damascene 공정을 해야 하는데, 이는 빈 공간을 먼저 만들고 이 공간에 Cu를 전기도금하여 채워 넣는 것을 말합니다 그리고 이렇게 다마신 하는 공정에는 Dual Damascene과 Single Damascene이 있습니다