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Atomic layer deposition - Wikipedia Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition The majority of ALD reactions use two chemicals called precursors (also called "reactants")
Optimizing Atomic Layer Deposition Using Flow and Pressure Control Spatial and temporal ALD are the two main types of ALD In temporal ALD, a carrier gas and two (or more) gas reactants are used in separate stages one after another In spatial ALD, the substrate is moved into separate growing chambers so that individual reactant gases never touch one another
Atomic Layer Deposition - an overview | ScienceDirect Topics ALD is a sequential process that involves several steps Initially, the initial reactant precursor is introduced into the chemical reaction chamber Subsequently, the reaction chamber undergoes a purging process to eliminate any surplus reactant
Nanomanufacturing: ALD FUNdamentals In a supercycle, the steps of two regular processes are combined where m cycles of the first process are followed by n cycles of the second process The variables m and n can be chosen so as to obtain the desired properties for the ALD or ALEt process
Atomic Layer Deposition - MKS Instruments ALD processing thus requires a very demanding and precise combination of effective precursor delivery and control with process and tool monitoring The ALD process consists of many cycles of short cycle-time steps employing multiple precursors delivered as very small, tightly controlled gas pulses
Atomic Layer Deposition Process Development Schematic illustration of a typical ALD cycle consisting of two half-cycles Sequential precursor and co-reactant doses are separated by purge or pump steps, leading to self-limiting film growth