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SIGE SEMICONDUCTOR

OTTAWA-Canada

Company Name:
Corporate Name:
SIGE SEMICONDUCTOR
Company Title:  
Company Description:  
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Company Address: 2680 Queensview Dr,OTTAWA,ON,Canada 
ZIP Code:
Postal Code:
K2B8J9 
Telephone Number: 6138209244 
Fax Number: 6138204933 
Website:
 
Email:
 
USA SIC Code(Standard Industrial Classification Code):
873106 
USA SIC Description:
Electronic Research & Development 
Number of Employees:
5 to 9 
Sales Amount:
 
Credit History:
Credit Report:
Excellent 
Contact Person:
Jim Derbyshire 
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Company News:
  • semiconductors - What is silicon germanium (SiGe)? - Electrical . . .
    SiGe is a semiconductor alloy, meaning a mixture of two elements, silicon and germanium Since 2000 or so, SiGe has become widely used to enhance the performance of ICs of various types
  • amplifier - SiGe GaAs RF MMIC as photodiode preamp - Electrical . . .
    Could you suggest if it's possible to effectively use SiGe GaAs RF MMIC (which have 50 Ohm input impedance) as first stage of photodiode amplifier? The idea is to reverse bias diode from some +50
  • transistors - Large SiGe ASICs for digital logic - Electrical . . .
    Are SiGe NPN transistors used to build digital gates? Yes This is done either for very simple, small logic, when you might need a few hundred control gates in a power amplifier or similar (and you can save the cost of the BiCMOS part in the process), or when logic needs to be really fast (for example in some of the building blocks in PLLs)
  • Change the sheet size shape in Altium PCB editor
    The " Sheet " layer is just like any other mechanical layer (see the " View Configuration " panels -> " Layers Colors "), and you'll probably need to add it manually unless you have a template setup After drawing an outline, uncheck and re-check the " Get Size From Sheet Layer " box (or close re-open the PCB), and Altium will then use the extremes of whatever you place on that layer for the
  • Why does MOSFET pinch-off occur? - Electrical Engineering Stack Exchange
    This question is about enhanced n-type MOSFETs From what I understand, an inversion layer is formed underneath the insulating layer below the gate of the MOSFET when a voltage is applied to the ga
  • Highest speed of operation [BJT vs MOSFET] [closed]
    You can make SiGe bipolar transistors (on a chip) with ft's approaching 100GHz, and 4000 series CMOS (enhancement mode MOSFETS) that struggle to switch at 5MHz with low supply voltage
  • How close are we to fabricating a germanium IC?
    5 I am not actually talking here about SiGe (silicon-germanium hybrids) but an integrated circuit that uses entirely Germanium (doped of course in certain areas)? It is my understanding that even though germanium was used to make the first discrete transistors, there are many problems with using it as a substrate for IC fabrication
  • materials - When to use which semiconductor? - Electrical Engineering . . .
    High carrier mobility, which allows higher frequency devices For this you'll see materials like SiGe, GaAs, GaN, or InP used A specific lattice constant, for growing one material epitaxially on a substrate of another material The ability to engineer both lattice constant and bandgap is why you see ternary and quaternary compounds like
  • Maximum Allowed Radiated Continous Wave Power in 61. 25GHz ISM Band
    Still, getting stuff to work at 60 GHz isn't easy and probably will require a chip in SiGe technology like described in the last article you refer to Maybe the solution C Bredendiek etc describe transmits more power than allowed (OK if you sit in a Faraday cage) or is a solution that only is allowed in some regions
  • manufacturing - What are the primary industrial uses of gallium and . . .
    But to my thinking, germanium and gallium are present in only milligram quantities in consumer electronics for example, maybe a small, RF strained silicon or SiGe CMOS chip here or a GaAs power amplifier there




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